Details

Autor(en) / Beteiligte

• Mitsuishi, Hajime
• Mori, Hiroshi
• Maeda, Hidehiro
• Ushijima, Mikio
• Kamashita, Atsushi
• Okada, Masashi
• Aramata, Masanori
• Shiomi, Takashi
• Sakamoto, Shinya
• Takahata, Kishou
• Chiba, Tomohiro
• Fukuda, Minoru
• Kanbayashi, Masahiro
• Shimoda, Toshimasa
• Sugaya, Isao

Titel

Development of Next-Generation Distortion Correction Technologies for High-Precision Wafer-to-Wafer Bonding

Ist Teil von

• 2024 International Conference on Electronics Packaging (ICEP), 2024, p.1-2

Ort / Verlag

Japan Institute of Electronics Packaging

Erscheinungsjahr

2024

Link zum Volltext

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• A wafer bonder that stably achieves a bonding overlay accuracy of 50 nm is developed. Correction technologies for various bonding-induced distortion fingerprints, which are one of the key technologies, and the prospect for future improvements of bonding overlay accuracy are reported. These high-precision bonding technologies will be essential for the fabrication of future three-dimensional integrated circuits.