Details

Autor(en) / Beteiligte

• Hamming-Green, Ruben
• Ram, Mamidala Saketh
• Falcone, Donato Francesco
• Noheda, Beatriz
• Offrein, Bert Jan
• Begon-Lours, Laura

Titel

Multi-Level, Low-Voltage Programming of Ferroelectric HfO2/ZrO2 Nanolaminates Integrated in the Back-End-Of-Line

Ist Teil von

• 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2024

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Functionalizing the Back-End-Of-Line of integrated circuits with non-volatile memories enables the deployment of in-memory computing architectures. By partitioning HfZrO 4 into HfO 2 -ZrO 2 nanolaminates, the remanent polarization and the capacitance are improved by 14 and 29%, respectively. Ferroelectric capacitors are integrated into the Back-End-Of-Line of a silicon circuit with NMOS transistors. Bipolar, multilevel polarization programming is possible below 3V, allowing device operation through NMOS transistors. The influence of the substrate on the nanolaminate's material properties is discussed.