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2024 IEEE Applied Sensing Conference (APSCON), 2024, p.1-4
2024

Details

Autor(en) / Beteiligte
Titel
Hybridized Graphene Oxide FETs with Amplified Gas Sensitivity
Ist Teil von
  • 2024 IEEE Applied Sensing Conference (APSCON), 2024, p.1-4
Ort / Verlag
IEEE
Erscheinungsjahr
2024
Link zum Volltext
Quelle
IEEE Electronic Library (IEL)
Beschreibungen/Notizen
  • The current study concerns a new approach to achieve amplified gas sensitivity in hybrid graphene oxide (GO) based field effect transistors (FET) sensors. Chemically synthesized TiO 2 nanoparticles, WO 3 nanoflowers and Pd nanoparticles were used to functionalize GO channel which was then implemented in back gated FET structure sensors fabricated on SiO 2 /Si substrate. Morphology of pure and hybridized GO were characterized with field emission scanning electron microscopy. IDS-VGS characteristics of all the FET sensors were measured in air and 100 ppm of ethanol/acetone ambient. Interestingly, all the sensors exhibited a peak response magnitude at a particular \mathrm{V}_{\mathrm{G S}} closed to the Dirac point. Therefore, to achieve a high sensitivity, transient response was measured at \mathrm{V}_{\mathrm{G S}} \approx \mathrm{V}_{\mathrm{Dirac}}, while \mathrm{V}_{\mathrm{D S}}=1 \mathrm{V} (constant). ~49%, ~55%, ~229% and ~129% response towards 100 ppm of ethanol/acetone were recorded for pure GO, p-TiO 2 -GO, WO 3 - GO and Pd-GO sensors, respectively. The recorded responses at \mathrm{V}_{\mathrm{G S}} \approx \mathrm{V}_{\mathrm{{Dirac}}} were. 7,11,21 and 64 times amplified than that of the \mathrm{V}_{\mathrm{G S}}=0. The amplified sensitivity was achieved by modulating the carrier concentration of GO channel through optimized gate electrostatic. The functionalization of GO with TiO 2 , WO 3 and Pd further enhanced the catalytic activity, selectivity, dissociative adsorption properties of the sensing channel towards different VOCs.
Sprache
Englisch
Identifikatoren
DOI: 10.1109/APSCON60364.2024.10466144
Titel-ID: cdi_ieee_primary_10466144

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