Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2002, p.28-31
2002
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Details
- Autor(en) / Beteiligte
- Titel
- A simulation study on thin SOI bipolar transistors with fully or partially depleted collector
- Ist Teil von
- Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2002, p.28-31
- Ort / Verlag
- Piscataway NJ: IEEE
- Erscheinungsjahr
- 2002
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- Vertical npn BJTs on thin SOI with a partially or fully depleted collector are studied by 2-dimensional device simulations. It is found that compared to conventional bulk BJTs, the SOI BJTs have a reduced base-collector capacitance, a higher Early voltage and a higher breakdown voltage. A SOI BJT with a fully-depleted collector can achieve a higher f/sub max/ with a comparable current gain and f/sub T/.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 9780780375611, 0780375610ISSN: 1088-9299eISSN: 2378-590XDOI: 10.1109/BIPOL.2002.1042880Titel-ID: cdi_ieee_primary_1042880
- Format
- –
- Schlagworte
- Applied sciences, BiCMOS integrated circuits, Bipolar transistors, Breakdown voltage, Capacitance, Circuit properties, CMOS technology, Electric, optical and optoelectronic circuits, Electronics, Exact sciences and technology, Germanium silicon alloys, Microelectronics, Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits, Radio frequency, Research and development, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Silicon germanium, Transistors