Details

Autor(en) / Beteiligte

• Gao, Zhe
• Park, Geunsook
• Fu, Linda
• Chapinal, Genis
• Yang, Joseph
• Freson, Tom
• Qin, Qing
• Guo, Jiayu
• Zhu, Fan
• Ding, Shaomin
• Lin, Zhiqiang
• Hsiung, Alan Chih-Wei
• Mabuchi, Keiji
• Geurts, Tomas
• Grant, Lindsay A.
• Dai, T.J.

Titel

A 2.2μm 2-Layer Stacked HDR Voltage Domain Global Shutter CMOS Image Sensor with Dual Conversion Gain and 1.2e- FPN

Ist Teil von

• 2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2023

Quelle

IEEE Xplore

Beschreibungen/Notizen

• The world's smallest HDR voltage-domain global shutter (VDGS) image sensor with 2.2μm pixel pitch was fabricated based on a 2-layer stacking process with Cu-to-Cu wafer bonding process. The pixel contains four storage capacitors within a 2.2μm pitch and has 1×2 shared structure to enable reducing transistor count in the second pixel layer. This design features single exposure dual conversion gain (DCG) capture, dual exposure capture and low noise performance, i.e. 1.2e-rms of pixel level fixed pattem noise (FPN) and 3.8e-rms of temporal noise.