Details

Autor(en) / Beteiligte

• Jay, A.
• Mesnard, C.
• Nicholson, I.
• Helleboid, R.
• Mugny, G.
• Rideau, D.
• Goiffon, V.
• Samos, L. Martin
• Richard, N.
• Hemeryck, A.

Titel

Quantum Modeling of Semiconductors Leakage Currents Induced by Defects

Ist Teil von

• 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.141-144

Ort / Verlag

The Japan Society of Applied Physics

Erscheinungsjahr

2023

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We present a full quantum calculation of the electron-hole generation/recombination rate caused by atomic-scale defects, which are known to be at the origin of the noise in semiconductors. While numerous attempts have been made to model this non-radiative multiphonon processes (MPE) using analytical approximations, only a few have reported numerical solutions that consider both the electronic and ionic overlaps. In this study, we tackle this issue within the framework of a complete ab initio calculation, which involves computing the dynamical matrix in large supercells. To address the challenge of calculation the ionic integral, we propose a semi-classical method.