Details

Autor(en) / Beteiligte

• Wu, Ming-Hung
• Cho, Chen-Yi
• Huang, Hsin-Hui
• Huang, Tz-Shiuan
• Wang, I-Ting
• Jang, Wen-Yueh
• Chang, Shou-Zen
• Hou, Tuo-Hung

Titel

Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory-Part II: Experiment

Ist Teil von

• IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6268-6272

Ort / Verlag

IEEE

Erscheinungsjahr

2023

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• The key design concepts of the two-transistor metal-ferroelectric-metal (MFM) field-effect transistor (2T-MFMFET) are successfully validated experimentally. The 2T-MFMFET was fabricated using the back-end-of-line (BEOL) MFM integrated with the 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> standard CMOS technology. Important factors for designing a sufficient memory window at low operating voltages, namely, the area ratio (AR) tuning between the ferroelectric (FE) capacitor and the readout transistor and the write/read voltage, are discussed. Due to the low operating voltage used, the retention and endurance of 2T-MFMFET are further investigated to understand the effects of FE switching in a minor polarization-voltage (<inline-formula> <tex-math notation="LaTeX">{P} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula>) loop. A write voltage pulse of 2 V and 100 ns is sufficient to ensure excellent retention of at least 10 years at 85 °C and endurance of at least <inline-formula> <tex-math notation="LaTeX">10^{{10}} </tex-math></inline-formula> cycles with a threshold-voltage shift window of at least 0.64 V in a device without full optimization. From both the theoretical and experimental analysis, 2T-MFMFET shows promising potential as a BEOL compatible, high-density, low-voltage embedded nonvolatile memory (eNVM) technology with robust reliability.