Details

Autor(en) / Beteiligte

• Zhang, Yu
• Zhang, Jing-Wei
• Wang, Yin-Da
• Chen, Zhi-Yuan
• Yin, Wen-Yan

Titel

Thermal-Fluid Co-Simulation and Modelling of IGBT with Thermal Resistance Network

Ist Teil von

• 2023 International Applied Computational Electromagnetics Society Symposium (ACES-China), 2023, p.1-4

Ort / Verlag

Applied Computational Electromagnetics Society (ACES)

Erscheinungsjahr

2023

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Due to the miniaturization of power semiconductor device and the increasing power density, temperature prediction has played an important part in module reliability. In this paper, the model of an insulated gate bipolar transistor (IGBT) module is firstly established, and junction temperature is extracted from the numerical simulation. Furthermore, the corresponding thermal resistance network is constructed by temperature curve fitting. Under various circumstances, we achieve fine agreement with finite element method (FEM).