Details

Autor(en) / Beteiligte

• Guo, Shanlei
• Wang, Xue
• Sun, Jing
• Tong, Yanhong
• Tang, Qingxin
• Liu, Yichun

Titel

Intrinsically Stretchable n-Type Organic Transistor Based on Elastic Hybrid Network Semiconducting Film

Ist Teil von

• IEEE electron device letters, 2023-11, Vol.44 (11), p.1853-1856

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2023

Quelle

IEL

Beschreibungen/Notizen

• Intrinsically stretchable organic field-effect transistors (OFETs) are actively researched in wearable electronics because of their outstanding advantages including high mechanical deformation, low-cost and stable electrical performance. However, the investigation of intrinsically stretchable n-type OFETs, crucial for logic circuits, remains limited. Here, intrinsically stretchable n-type OFETs based on elastic hybrid network semiconducting film were fabricated. The stretchable n-type semiconducting films present a high crack-onset strain of 110% strain (original 4%) and high electron mobility of 0.12 cm<inline-formula> <tex-math notation="LaTeX">^{{2}}\,\,\text{V}^{-{1}}\,\,\text{s}^{-{1}} </tex-math></inline-formula>. Based on the stretchable semiconducting film, the intrinsically stretchable n-type OFETs show stable electrical performance at 50% strain and could stably drive LED under <inline-formula> <tex-math notation="LaTeX">\approx 25 </tex-math></inline-formula>% strain. Our work provides a simple co-mixing strategy to improve the stretchability of n-type semiconductors and applies it to intrinsically stretchable n-type organic field-effect transistors, showing great promise for applications in the integration of wearable electronics.