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We conducted an analysis to reduce Electro-Magnetic Interference (EMI) from mobile Dynamic Random Access Memories (DRAMs) by measuring baseline EMI radiation, specifically during idle modes of LPDDR5 DRAMs. We measured the peak H-field over LPDDR5 dies and compared it against our High Frequency Structure Simulation (HFSS). Our observation showed that the peak H-field's frequency components are well correlated with the harmonic frequency spectrum of the internal LPDDR5 Command and Address (CA) path's Common Mode (CM) currents that pass through chip power or ground Re-Distribution Lines (RDL), package power or ground layers, and Printed Circuit Board (PCB) substrate layers. Both near H-field maps of our measurement and simulation showed reasonable agreement on the peak H-field radiation mostly through the CM current's power or ground paths. This finding suggests that the other radiation through external CA signal paths can be neglected, particularly during the idle modes.