Details

Autor(en) / Beteiligte

• Wang, Jinlei
• Guan, Fenglin
• Hang, Mingguang
• Jia, Lili
• Li, Fang
• Cheng, Xinhua

Titel

Study on the Effect of Water Spraying Mode on the N Content of Wafer Surface after SC1 Cleaning in Light Doping Process

Ist Teil von

• 2023 China Semiconductor Technology International Conference (CSTIC), 2023, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2023

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In the lightly doping process, it was found that the N content on wafer surface increased after wet cleaning process. In this paper, XPS was used to characterize the N content on wafer, and the effect of different CO_{2} water spraying modes on the N content of the wafer after SC1 cleaning was studied. The results show that the CO_{2} water spraying by fix mode is not enough to clean the center of the wafer, which leads to high N content in the area. Compared with fix mode, the CO_{2} water spray can directly cover the wafer center by scan mode, which can enhance the cleaning ability of CO_{2} water to the wafer center and effectively reduce the N content in the area after the wet process.