Details

Autor(en) / Beteiligte

• Park, Won Ji
• Oh, Jae Hee
• Ding, Shaofeng
• Jang, Woo Seong
• Kim, Hyung Won
• Hyun, Young Bin
• Kim, Tae Kyun
• Nam, Seung Ki
• Son, Jung Il
• Moon, Seong Wook
• Ahn, Jeong Hoon
• Ku, Ja Hum
• Kim, Sunoo

Titel

The Second Generation of Integrated Stack Capacitor (ISC) for Power Integrity Improvement

Ist Teil von

• 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM), 2023, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2023

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Capacitors are the one of the key parts in a wide variety of electronic applications, such as radio-frequency (RF) and mixed-signal integrated circuits (ICs), to achieve high performance. In this paper, the 2 nd generation of integrated stack capacitor (ISC GEN-2) was developed as a decoupling capacitor and characterized by using a simulation, capacitance (C i ), leakage current and WLR (Wafer Level Reliability) results. The capacitance of ISC GEN-2 is above 1,000 fF/um 2 and approximately 3 times higher than the 1 st generation of ISC (ISC GEN-1). With an improved capacitance on ISC GEN-2, it showed lower voltage noise, ~0.66x, compared to LICC (Low Inductance Chip Capacitor) at a given circuit simulation. The WLR results showed to meet the desired requirements.