Details

Autor(en) / Beteiligte

• Weman, H.
• Sirigu, L.
• Leifer, K.
• Karlsson, K.F.
• Rudra, A.
• Kapon, E.

Titel

Efficient, narrow linewidth emission from InGaAs/AlGaAs V-groove quantum wire light-emitting diodes

Ist Teil von

• Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.713-716

Ort / Verlag

IEEE

Erscheinungsjahr

2002

Quelle

IEL

Beschreibungen/Notizen

• We have succeeded to achieve highly efficient, narrow linewidth electroluminescence (EL) at room temperature from strained InGaAs quantum wire (QWR) light-emitting diodes (LEDs). The internal quantum efficiency is estimated to be as high as 60% for a single layer, 500-nm-pitch V-groove In/sub 0.15/Ga/sub 0.85/As QWR array LED, emitting at 1.29 eV (/spl lambda/ = 960 nm) with a linewidth as narrow as 14 meV. The high efficiency is achieved with the aid of selective carrier injection directly into the QWRs through self-ordered AlGaAs vertical quantum wells (VQWs), where the VQWs were separated from the InGaAs QWRs by thin GaAs spacer layers in order to reduce nonradiative recombination and inhomogeneous alloy broadening.