Details

Autor(en) / Beteiligte

• Gautam, Pramod Kumar
• Bharti, Manisha
• Paras, Neha

Titel

Investigation of the Direct Source to Drain Tunneling in 5 nm Nanotube Junctionless Field Effect Transistor

Ist Teil von

• 2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS), 2023, p.1-6

Ort / Verlag

IEEE

Erscheinungsjahr

2023

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• In this paper, The performance of a nanotube (NT) junctionless field effect transistor (JLFET) is studied in the sub-5 nm range. We demonstrate the effect of quantum confinement effects which leads to direct source to drain tunneling in the 5nm NT JLFET. Lateral band to band tunneling(L-BTBT) along with Direct source to drain tunneling which affects the OFF state performance of the device is also studied in this paper. The inclusion of high dielectric(high-k) spacers and the core gate to the device improve the performance. Lastly we have shown the effect of diameter of core gate on the device and inclusion of the hetero structures such Si-Ge also helps in achieving better performance in the device.