Details

Autor(en) / Beteiligte

• Yue, Shaozhong
• Zheng, Xuefeng
• Hong, Yuehua
• Zhang, Xiangyu
• Zhang, Fang
• Wang, Yingzhe
• Ma, Xiaohua
• Hao, Yue

Titel

Effects of Neutron Irradiation on Electrical Performance of β-Ga2 O3 Schottky Barrier Diodes

Ist Teil von

• IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.3026-3030

Ort / Verlag

IEEE

Erscheinungsjahr

2023

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• The effect of neutron irradiation on the electrical performance of the <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 Schottky barrier diode (SBD) device has been studied in this work. After equivalent 1 MeV neutron irradiation with a fluence of <inline-formula> <tex-math notation="LaTeX">1\times 10^{{14}} </tex-math></inline-formula> n/cm2, a 20% decrease in the forward current density (<inline-formula> <tex-math notation="LaTeX">{J}_{\text {F}}{)} </tex-math></inline-formula>, a 75% reduction in the reverse current density (<inline-formula> <tex-math notation="LaTeX">{J}_{\text {R}}{)} </tex-math></inline-formula>, and a 300 V increase in the breakdown voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {br}}{)} </tex-math></inline-formula> have been observed according to current-voltage (<inline-formula> <tex-math notation="LaTeX">{I} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V}{)} </tex-math></inline-formula> measurements. Utilizing the frequency-dependent conductance technique, it is found that the density of interface states located at Pt/Ga2O3 increases slightly from <inline-formula> <tex-math notation="LaTeX">2.6\times 10^{{12}} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">6.4\times 10^{{12}} </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">2.9\times 10^{{12}} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">7.0\times 10^{{12}} </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">^{-{2}} </tex-math></inline-formula>eV<inline-formula> <tex-math notation="LaTeX">^{-{1}} </tex-math></inline-formula> with an increase in trap activation energy from 0.09-0.122 to 0.096-0.134 eV after neutron irradiation. Furthermore, based on the capacitance-voltage (<inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V}{)} </tex-math></inline-formula> measurement, it is observed that the carrier concentration across the Ga2O3 drift layer was decreased from <inline-formula> <tex-math notation="LaTeX">1.80\times 10^{{16}} </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">1.35\times 10^{{16}} </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">^{-{3}} </tex-math></inline-formula> after neutron irradiation. Considering the device performance change, it indicates that the bulk traps within the Ga2O3 drift layer instead of interface states dominate the device degradation.