Details

Autor(en) / Beteiligte

• Paraliev, Martin

Titel

Development of GaN HEMT Based Positive/Negative, 5 kV, Nanosecond Pulse Generator for the SLS 2.0 Fast Injection Kicker

Ist Teil von

• 2022 IEEE International Power Modulator and High Voltage Conference (IPMHVC), 2022, p.49-52

Ort / Verlag

IEEE

Erscheinungsjahr

2022

Quelle

IEEE

Beschreibungen/Notizen

• The SLS 2.0 project aims upgrading the existing 3rd generation Swiss Light Source (SLS) at the Paul Scherrer Institute in to a 4th generation, diffraction limited light source down to soft X-ray wavelengths, to substantially increase its brightness and to ameliorate the photon beam stability in top-up mode. Conventional (four-kicker) top-up injection in a Storage Ring (SR) perturbs the stored electron beam, causing disturbance or interruption in the photon beam provided to the experimental stations. This creates inconveniences to sensitive experiments and reduces the total available photon flux. To minimize this effect, parallel to the baseline four-kicker injection system, SLS 2.0 plans to adopt a novel electron injection scheme (aperture sharing) that should limit the perturbed portion of the stored beam to only a couple of percents, leaving the rest of the beam to radiate undisturbed. A fast injection kicker, with deflection duration of several tens of nanoseconds, kicks the injected and a small portion of the stored beam in such way that they both are accommodated in the SR dynamic aperture. After some damping time, the injected and the displaced stored electron bunches join together returning to the nominal beam orbit, replenishing the stored beam charge. To power such fast kicker, short (< 40\ \text{ns}) , positive and negative electrical pulses with up to 5 \mathbf{kV} amplitude are necessary. We describe the progress in the development of a GaN HEMT based Marx pulse generator, capable of satisfying these requirements.