Details

Autor(en) / Beteiligte

• Kim, Woongrae
• Jung, Chulmoon
• Yoo, Seongnyuh
• Hong, Duckhwa
• Hwang, Jeongjin
• Yoon, Jungmin
• Jung, Ohyong
• Choi, Joonwoo
• Hyun, Sanga
• Kang, Mankeun
• Lee, Sangho
• Kim, Dohong
• Ku, Sanghyun
• Choi, Donhyun
• Joo, Nogeun
• Yoon, Sangwoo
• Noh, Junseok
• Go, Byeongyong
• Kim, Cheolhoe
• Hwang, Sunil
• Hwang, Mihyun
• Yi, Seol-Min
• Kim, Hyungmin
• Heo, Sanghyuk
• Jang, Yeonsu
• Jang, Kyoungchul
• Chu, Shinho
• Oh, Yoonna
• Kim, Kwidong
• Kim, Junghyun
• Kim, Soohwan
• Hwang, Jeongtae
• Park, Sangil
• Lee, Junphyo
• Jeong, Inchul
• Cho, Joohwan
• Kim, Jonghwan

Titel

A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

Ist Teil von

• 2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2023

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• DRAM products have been recently adopted in a wide range of high-performance computing applications: such as in cloud computing, in big data systems, and loT devices. This demand creates larger memory capacity requirements, thereby requiring aggressive DRAM technology node scaling to reduce the cost per bit [1], [2]. However, DRAM manufacturers are facing technology scaling challenges due to row hammer and refresh retention time beyond 1a-nm [2]. Row hammer is a failure mechanism, where repeatedly activating a DRAM row disturbs data in adjacent rows. Scaling down severely threatens reliability since a reduction of DRAM cell size leads to a reduction in the intrinsic row hammer tolerance [2], [3]. To improve row hammer tolerance, there is a need to probabilistically activate adjacent rows with carefully sampled active addresses and to improve intrinsic row hammer tolerance [2]. In this paper, row-hammer-protection and refresh-management schemes are presented to guarantee DRAM security and reliability despite the aggressive scaling from 1a-nm to sub 10-nm nodes. The probabilistic-aggressor-tracking scheme with a refresh-management function (RFM) and per-tow hammer tracking (PRHT) improve DRAM resilience. A multi-step precharge reinforces intrinsic row-hammer tolerance and a core-bias modulation improves retention time: even in the face of cell-transistor degradation due to technology scaling. This comprehensive scheme leads to a reduced probability of failure, due to row hammer attacks, by 93.1% and an improvement in retention time by 17%.