Details

Autor(en) / Beteiligte

• Rodal, Gard Lyng
• Pushpalatha, Yoganandam Vivekanandham
• Philipps, Daniel Alexander
• Peftitsis, Dimosthenis

Titel

Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-ON Switching Transients Modeling of High-Voltage SiC MOSFETs

Ist Teil von

• IEEE transactions on power electronics, 2023-05, Vol.38 (5), p.6128-6142

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2023

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this article, we present a discrete and real-time capable dynamic behavioral model of the turn- on switching transition of high-voltage and high-current silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ( mosfet ) half-bridge power modules. The dynamic switching model utilizes the Shichman and Hodges equations using voltage-dependent nonlinear device capacitances and module electrical parameters to obtain an accurate dynamic model of the device switching transients. The key device states that gate-source voltage, drain current, and drain-source voltage are modeled. This article investigates the impact of correct device capacitance modeling with low off -state gate-source voltage values, impacting the device capacitances and causes gate-voltage hysteresis effects. It has been shown that the presented discrete-time dynamic switching model accurately describes the turn- on transient and the results highlight the importance of correct capacitance and threshold voltage characterization data. The modeling results are compared with experimental measurements conducted in a 3.3 kV/750 A SiC mosfet power module. The model exhibits an average accuracy of <inline-formula><tex-math notation="LaTeX">{{\sim}} 4\%</tex-math></inline-formula> for turn- on energy and <inline-formula><tex-math notation="LaTeX">{\sim} 1.3\%</tex-math></inline-formula> for the turn- on time compared with measurements. These models are valuable for rapid and cost effective design and validation of advanced gate-driver circuits and for determining key design and operating parameters, such as dead time, switching frequency, and switching losses.