Details

Autor(en) / Beteiligte

• Chichkov, Nikolai B.
• Yadav, Amit
• Joulain, Franck
• Cozic, Solenn
• Smirnov, Semyon V.
• Shterengas, Leon
• Scheuermann, Julian
• Weih, Robert
• Koeth, Johannes
• Hofling, Sven
• Hinze, Ulf
• Poulain, Samuel
• Rafailov, Edik U.

Titel

Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier

Ist Teil von

• IEEE photonics journal, 2023-02, Vol.15 (1), p.1-7

Ort / Verlag

Piscataway: IEEE

Erscheinungsjahr

2023

Link zum Volltext

Quelle

Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals

Beschreibungen/Notizen

• Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m. The laser setup consists of a GaSb-based diode laser and a single-stage Er-doped fibre amplifier. Amplification is investigated for continuous wave (CW) and ns-pulsed input signals, generated by gain-modulation of the GaSb-based seed lasers. The experimental results include the demonstration of output powers up to 0.9 W, pulse durations as short as 20 ns, and pulse repetition rates up to 1 MHz. Additionally, the amplification of commercial and custom-made GaSb-based seed lasers is compared and the impact of different fibre end-cap materials on laser performance is analysed.