Details

Autor(en) / Beteiligte

• Gianesello, F.
• Charbuillet, C.
• Derrier, N.
• Muller, D.
• Diouf, C.
• Ney, D.
• Deglise-Favre, C.
• Sicard, I.
• Nsibi, M. Ali
• Debroucke, R.
• Buczko, M.
• Legrand, C.A.
• Cathelin, Ph
• Paillardet, F.
• Mas, J.C.
• Chevalier, P.
• Gloria, D.

Titel

0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs Ron x Coff Switch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions

Ist Teil von

• 2022 International Electron Devices Meeting (IEDM), 2022, p.11.7.1-11.7.4

Ort / Verlag

IEEE

Erscheinungsjahr

2022

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• RF Front End Modules (FEMs) are currently achieved using CMOS Silicon-on-insulator (SOI) as the dominant technology for RF switches integration in handsets RF FEMs [1]. But for cost sensitive market requiring less stringent performances (such as WiFi), high resistivity (HR) bulk SiGe BiCMOS technology has been proposed to achieve RF FEM System on Chip (SOC) integration [2], [3]. In this paper, we review the optimization of an advanced 200-mm HR SiGe BiCMOS technology based on a previous 0.13-μm process [4]. State of the art performances have been achieved from RF switch point of view with R ON × C OFF of 169 fs and WiFi SPDT RF switch exhibiting insertion loss of ~0.8 dB @ 5.5 GHz and power handling capability exceeding 31 dBm.