Details

Autor(en) / Beteiligte

• Berar, J.-F.
• Boudet, N.
• Breugnon, P.
• Caillot, B.
• Chantepie, B.
• Clemens, J.-C.
• Delpierre, P.
• Dinkespiller, B.
• Godiot, S.
• Meessen, Ch
• Menouni, M.
• Morel, C.
• Pangaud, P.
• Vigeolas, E.
• Hustache, S.
• Medjoubi, K.

Titel

XPAD3 hybrid pixel detector applications

Ist Teil von

• Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2009-08, Vol.607 (1), p.233-235

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Using Si sensors, the XPAD3 chip can be used from 4 up to 25 keV. The CdTe detector was designed to improve efficiency at higher energies (60 keV), but it still works at low energy: data were collected at 8 keV. Firstly, small detector prototypes were built and used for scattering experiments at BM02/ESRF and DIFABS/SOLEIL. Comparisons were made by collecting small angle X-ray scattering data using the same settings with the XPAD3 and the beam line CCD camera, as well as diffuse scattering from a quasi-crystal. Finally, a surface diffraction experiment was performed to characterize the strain in a few layers of GaInAs epitaxially grown on a GaAs single crystal.