Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Understanding charge transport in donor/acceptor blends from large-scale device simulations based on experimental film morphologies
Ist Teil von
Energy & environmental science, 2020-01, Vol.13 (2), p.61-615
Ort / Verlag
Cambridge: Royal Society of Chemistry
Erscheinungsjahr
2020
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Bulk-heterojunction organic photovoltaic (OPV) devices consist of active layers made of electron donor/acceptor blends. Understanding the impact of the blend morphologies on the optoelectronic processes occurring in OPVs is of crucial importance for a complete description of the device physics and the achievement of higher device efficiencies. However, high-resolution morphology data are scarce and theoretical methodologies with the appropriate level of details and affordable computational costs are underdeveloped. As a result, previous device modeling often had to rely on artificially generated blend morphologies, which do not represent those in actual devices. Here, by considering three-dimensional donor/acceptor blend morphologies recently determined
via
electron tomography, we have established an original approach that allows us to perform device-scale simulations of charge transport in actual blend morphologies. The current characteristics, carrier distributions, and internal current pathways and densities are determined and compared to those based on the artificial morphologies often used in OPV-related studies.
Simulation of the microscopic processes in the active layers of organic photovoltaic devices directly from experimental film morphologies.