Details

Autor(en) / Beteiligte

• Yatsui, T.
• Saito, H.
• Nishioka, K.
• Leuschel, B.
• Soppera, O.
• Nobusada, K.

Titel

Effects of a power and photon energy of incident light on near-field etching properties

Ist Teil von

• Applied physics. A, Materials science & processing, 2017-12, Vol.123 (12), p.1-6, Article 751

Ort / Verlag

Berlin/Heidelberg: Springer Berlin Heidelberg

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We developed a near-field etching technique for realizing an ultra-flat surfaces of various materials and structures. To elucidate the near-field etching properties, we have investigated the effects of power and the photon energy of the incident light. First, we established theoretically that an optical near-field with photon energy lower than the absorption edge of the molecules can induce molecular vibrations. We used nanodiamonds to study the power dependence of the near-field etching properties. From the topological changes of the nanodiamonds, we confirmed the linear-dependence of the etching volume with the incident power. Furthermore, we studied the photon energy dependence using TiO 2 nanostriped structures, which revealed that a lower photon energy results in a lower etching rate.