Details

Autor(en) / Beteiligte

• Sonneville, Camille
• Planson, Dominique
• Brosselard, Pierre
• Phung, Luong Viêt
• Tournier, Dominique
• Bevilacqua, Pascal
• Asllani, Besar

Titel

4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method

Ist Teil von

• Materials science forum, 2022-05, Vol.1062, p.341-345

Ort / Verlag

Trans Tech Publications Ltd

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This paper presents micro-OBIC measurements performed at different voltages on two devices protected by narrow field rings. At the surface of the device #1, a polyimide layer was deposited during the fabrication process. On the contrary, passivation layer was removed on device #2. Thanks to the micro-OBIC micrometer spatial resolution and the spot size carefully focused, small gaps in the range of 1 μm can be visible on OBIC profiles. Thus, the variation of the μ-obic accurately reflects the topology of each ring.