Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.52-55
2019
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Details
- Autor(en) / Beteiligte
- Titel
- Investigations on the displacement damage dose effects induced by heavy ion irradiation in silicon PiN photodiodes: Implications for modeling and simulation
- Ist Teil von
- Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.52-55
- Ort / Verlag
- Elsevier B.V
- Erscheinungsjahr
- 2019
- Quelle
- Elsevier ScienceDirect Journals
- Beschreibungen/Notizen
- In this paper, the displacement damage dose effects in PiN photodiodes is investigated using heavy ions experiments and numerical simulations realized thanks to Technology Computer Aided Design (TCAD) calculations. The parameter of interest is the dark current IDARK delivered by the photodiode which evolves during the heavy ions irradiation. The main goal is to define a model which bridges the gap between the introduction of traps energy states localized in the Si bandgap and the electrical behavior (as dark current variation).
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0168-583X, 1872-9584eISSN: 1872-9584, 0168-583XDOI: 10.1016/j.nimb.2019.05.018Titel-ID: cdi_hal_primary_oai_HAL_hal_03488627v1
- Format
- –
- Schlagworte
- Dark current, Displacement damage dose, Heavy ions irradiation, Photodiode PiN, Physics, Traps energy levels