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Carrier transport study on triphenylamine-thienothiophene-based hole transport material by MIS-CELIV method
Ist Teil von
Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGG01
Ort / Verlag
Tokyo: Japanese Journal of Applied Physics
Erscheinungsjahr
2020
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Charge carrier mobility measurement of a promising hole transport material, 4,4'-(thieno[3,2-b]thiophene-2,5-diyl)bis(N,N-bis(4-methoxyphenyl)aniline) (TT-2,5-TPA), with a p-dopant, lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) at various doping concentration, was carried out by utilizing metal–insulator–semiconductor charge extraction by the linearly increasing voltage (MIS-CELIV) method. Doping concentration dependence and temperature dependence of the hole mobility in TT-2,5-TPA thin films with LiTFSI were investigated in the MIS-CELIV measurement, and the enhancement of hole mobility and suppression of activation energy were discussed by taking the thermal activated hopping process into consideration.