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Autor(en) / Beteiligte
Titel
Multiresponsive Nonvolatile Memories Based on Optically Switchable Ferroelectric Organic Field‐Effect Transistors
Ist Teil von
  • Advanced materials (Weinheim), 2021-04, Vol.33 (14), p.e2007965-n/a
Ort / Verlag
Germany: Wiley Subscription Services, Inc
Erscheinungsjahr
2021
Quelle
Wiley Online Library
Beschreibungen/Notizen
  • Organic transistors are key elements for flexible, wearable, and biocompatible logic applications. Multiresponsivity is highly sought‐after in organic electronics to enable sophisticated operations and functions. Such a challenge can be pursued by integrating more components in a single device, each one responding to a specific external stimulus. Here, the first multiresponsive organic device based on a photochromic–ferroelectric organic field‐effect transistor, which is capable of operating as nonvolatile memory with 11 bit memory storage capacity in a single device, is reported. The memory elements can be written and erased independently by means of light or an electric field, with accurate control over the readout signal, excellent repeatability, fast response, and high retention time. Such a proof of concept paves the way toward enhanced functional complexity in optoelectronics via the interfacing of multiple components in a single device, in a fully integrated low‐cost technology compatible with flexible substrates. A multiresponsive organic device based on a photochromic–ferroelectric field‐effect transistor, which is capable of operating as nonvolatile memory with 11 bit memory storage capacity in a single device, is fabricated. The memory elements can be written and erased independently by light or an electric field, with accurate control over the readout signal, excellent repeatability, fast response, and high retention time.
Sprache
Englisch
Identifikatoren
ISSN: 0935-9648
eISSN: 1521-4095
DOI: 10.1002/adma.202007965
Titel-ID: cdi_hal_primary_oai_HAL_hal_03194966v1

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