Details

Autor(en) / Beteiligte

• Sobczak, K.
• Borysiuk, J.
• Strąk, P.
• Jakieła, R.
• Koroński, K.
• Kaminska, A.
• Monroy, E.
• Krukowski, S.

Titel

Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

Ist Teil von

• Micron (Oxford, England : 1993), 2020-07, Vol.134, p.102864-102864, Article 102864

Ort / Verlag

England: Elsevier Ltd

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• [Display omitted] •The sensitivity of SSD detector allows the determination of doping in GaN (QW).•The use of the AlN as a standard in STEM/EDS allows the quantitative determination of Si doping.•Quantifying STEM/EDS studies of Si in GaN area give correct Si dope values. A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3×1019cm-3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).