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Enhanced light extraction from InGaN/GaN quantum wells with silver gratings
Ist Teil von
Applied physics letters, 2013-02, Vol.102 (8)
Ort / Verlag
American Institute of Physics
Erscheinungsjahr
2013
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating.