Details

Autor(en) / Beteiligte

• Morassi, Martina
• Guan, Nan
• Dubrovskii, Vladimir G
• Berdnikov, Yury
• Barbier, Camille
• Mancini, Lorenzo
• Largeau, Ludovic
• Babichev, Andrey V
• Kumaresan, Vishnuvarthan
• Julien, Francois H
• Travers, Laurent
• Gogneau, Noëlle
• Harmand, Jean-Christophe
• Tchernycheva, Maria

Titel

Selective Area Growth of GaN Nanowires on Graphene Nanodots

Ist Teil von

• Crystal growth & design, 2020-02, Vol.20 (2), p.552-559

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2020

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present a new approach to achieve selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy. The nanowires are grown on graphene nanodots, which are patterned by electron beam lithography from polycrystalline graphene patches transferred to SiO2 substrates. The GaN nanowires grow on these graphene nanodomains with a perfect selectivity with respect to the SiO2 surrounding surface. The results demonstrate that a single monolayer of graphene can withstand the lithography process without losing its ability to induce epitaxial growth. The nanowire length distribution and patterns’ fill factor are analyzed in the framework of a theoretical model, which takes into account an incubation time dependent on the graphene dot size. Overall, these results represent the first demonstration of selective area nanowire growth on a regular array of graphene nanodomains.