Details

Autor(en) / Beteiligte

• Lafforgue, Christian
• Guerber, Sylvain
• Ramirez, Joan Manel
• Marcaud, Guillaume
• Alonso-Ramos, Carlos
• Le Roux, Xavier
• Marris-Morini, Delphine
• Cassan, Eric
• Baudot, Charles
• Boeuf, Frédéric
• Cremer, Sébastien
• Monfray, Stéphane
• Vivien, Laurent

Titel

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300  mm industrial platform

Ist Teil von

• Photonics research (Washington, DC), 2020-03, Vol.8 (3), p.352-358

Ort / Verlag

Optical Society of America

Erscheinungsjahr

2020

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.