Details

Autor(en) / Beteiligte

• Arnault, J.C.
• Lee, K.H.
• Delchevalrie, J.
• Penuelas, J.
• Mehmel, L.
• Brinza, O.
• Temgoua, S.
• Stenger, I.
• Letellier, J.
• Saint-Girons, G.
• Bachelet, R.
• Issaoui, R.
• Tallaire, A.
• Achard, J.
• Barjon, J.
• Eon, D.
• Ricolleau, C.
• Saada, S.

Titel

Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

Ist Teil von

• Diamond and related materials, 2020-05, Vol.105, p.107768, Article 107768

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Advanced characterizations with combined analytical tools were carried out at the different stages of diamond heteroepitaxy on Ir/STO/Si (001) substrates. HRTEM and STEM-EELS revealed the presence of epitaxial nanometric diamond crystals after bias enhanced nucleation. UV Raman allowed estimating the diamond film quality and its strain at the early stages of heteroepitaxial growth. The crystalline structure and the strain within thick heteroepitaxial films were determined by XRD and CL investigations. A CL study of the cross-section provided the mapping of the dislocation network along the growth direction. Measurements performed on lateral Schottky diodes fabricated on a thick diamond film showed an excellent reproducibility on the substrate with a Schottky barrier height in good agreement with those obtained on homoepitaxial layers. [Display omitted] •Characterizations performed at different stages of heteroepitaxy to relate the electrical properties to the structural ones.•After BEN and without CVD growth, diamond nuclei are evidenced by HRTEM and STEM-EELS•Measurements on lateral Schottky diodes showed an excellent reproducibility on the substrate•Schottky barrier height in good agreement with those obtained on homoepitaxial layers•Heteroepitaxial diamond films show similar boron incorporation efficiency as homoepitaxial ones.