Details

Autor(en) / Beteiligte

• Novotný, M.
• Marešová, E.
• Fitl, P.
• Vlček, J.
• Bergmann, M.
• Vondráček, M.
• Yatskiv, R.
• Bulíř, J.
• Hubík, P.
• Hruška, P.
• Drahokoupil, J.
• Abdellaoui, N.
• Vrňata, M.
• Lančok, J.

Titel

The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

Ist Teil von

• Applied physics. A, Materials science & processing, 2016-03, Vol.122 (3), p.1-8, Article 225

Ort / Verlag

Berlin/Heidelberg: Springer Berlin Heidelberg

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD) and organic molecular evaporation (OME). ZnO:Sm thin film was grown by PLD (Nd:YAG, λ  = 266 nm, τ  = 6 ns) from Sm 2 O 3 :ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO:Sm layer by OME. ZnO:Sm films of c -axis-oriented hexagonal wurtzite structure and α-form ZnPc were obtained. Emission of intra-4f transition in Sm 3+ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO:Sm/ZnPc were observed. Electrical properties were not affected by Sm 3+ dopant as ZnO:Sm film exhibited high electrical resistivity ~5 × 10 4  Ω cm.