Details

Autor(en) / Beteiligte

• Krishtopenko, S. S.
• Desrat, W.
• Spirin, K. E.
• Consejo, C.
• Ruffenach, S.
• Gonzalez-Posada, F.
• Jouault, B.
• Knap, W.
• Maremyanin, K. V.
• Gavrilenko, V. I.
• Boissier, G.
• Torres, J.
• Zaknoune, M.
• Tournié, E.
• Teppe, F.

Titel

Massless Dirac fermions in III-V semiconductor quantum wells

Ist Teil von

• Physical review. B, 2019-03, Vol.99 (12), Article 121405

Ort / Verlag

College Park: American Physical Society

Erscheinungsjahr

2019

Quelle

American Physical Society Journals

Beschreibungen/Notizen

• We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the Γ point of the Brillouin zone. Analysis of experimental data within an analytical Dirac-like Hamiltonian allows us not only to determine the velocity ( v F = 1.8 × 10 5 m/s) of massless Dirac fermions, but also to demonstrate a significant nonlinear dispersion at high energies.