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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor
Ist Teil von
Nano letters, 2014-04, Vol.14 (4), p.2094-2098
Ort / Verlag
Washington, DC: American Chemical Society
Erscheinungsjahr
2014
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We investigate the gate-induced onset of few-electron regime through the undoped channel of a silicon nanowire field-effect transistor. By combining low-temperature transport measurements and self-consistent calculations, we reveal the formation of one-dimensional conduction modes localized at the two upper edges of the channel. Charge traps in the gate dielectric cause electron localization along these edge modes, creating elongated quantum dots with characteristic lengths of ∼10 nm. We observe single-electron tunneling across two such dots in parallel, specifically one in each channel edge. We identify the filling of these quantum dots with the first few electrons, measuring addition energies of a few tens of millielectron volts and level spacings of the order of 1 meV, which we ascribe to the valley orbit splitting. The total removal of valley degeneracy leaves only a 2-fold spin degeneracy, making edge quantum dots potentially promising candidates for silicon spin qubits.