Applied physics letters, 2016-05, Vol.108 (21)
2016
Details
- Autor(en) / Beteiligte
- Titel
- Dopant-controlled single-electron pumping through a metallic island
- Ist Teil von
- Applied physics letters, 2016-05, Vol.108 (21)
- Ort / Verlag
- Melville: American Institute of Physics
- Erscheinungsjahr
- 2016
- Link zum Volltext
- Quelle
- AIP Journals Complete
- Beschreibungen/Notizen
- We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0003-6951eISSN: 1077-3118DOI: 10.1063/1.4951679Titel-ID: cdi_hal_primary_oai_HAL_hal_02009379v1
- Format
- –
- Schlagworte
- Applied physics, CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS, Computer simulation, Condensed Matter, DIFFUSION BARRIERS, Dopants, DOPED MATERIALS, Electron pumping, ELECTRON TRANSFER, Electrons, Mesoscopic Systems and Quantum Hall Effect, PHOSPHORUS, Physics, PUMPING, Radio signals, RADIOWAVE RADIATION, RESONANCE, Resonant tunneling, SIGNALS, SILICON, SIMULATION, Technology transfer, TUNNEL EFFECT