Details

Autor(en) / Beteiligte

• Suarez-Segovia, C.
• Leroux, C.
• Caubet, P.
• Domengie, F.
• Reimbold, G.
• Romano, G.
• Gourhant, O.
• Joseph, V.
• Ghibaudo, G.

Titel

Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14nm NMOS devices

Ist Teil von

• Microelectronic engineering, 2015-11, Vol.147, p.113-116

Ort / Verlag

Elsevier

Erscheinungsjahr

2015

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• Sacrificial gate first process efficiency to further increase effective work function (WF$_{eff}$) towards P+ by metallic aluminum diffusion is demonstrated in this work by combining capacitance vs voltage (CV) measurements on beveled oxides with different spectroscopic techniques. Aluminum diffusion role on WF$_{eff}$ is evidenced and is found to be simultaneously dependent of as-deposited aluminum dose and annealing temperature.