Details

Autor(en) / Beteiligte

• Jeon, Dae-Young
• Park, So Jeong
• Mouis, Mireille
• Barraud, Sylvain
• Kim, Gyu-Tae
• Ghibaudo, Gérard

Titel

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Ist Teil von

• Applied physics letters, 2014-12, Vol.105 (26)

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2014

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (LM = 30 nm) and a long channel (LM = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (gm) behavior and compared to conventional inversion-mode nanowire transistors.