Details

Autor(en) / Beteiligte

• Fauquier, L.
• Pelissier, B.
• Jalabert, D.
• Pierre, F.
• Gassilloud, R.
• Doloy, D.
• Beitia, C.
• Baron, T.

Titel

Depth profiling investigation by pARXPS and MEIS of advanced transistor technology gate stack

Ist Teil von

• Microelectronic engineering, 2017-02, Vol.169, p.24-28

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2017

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• The High-k Metal Gate (HKMG) film stack, introduced since 32nm node of complementary metal oxide semiconductor (CMOS) technology, is one major case where composition determination is mandatory. Parallel Angle-Resolved X-ray Photoelectron Spectroscopy (pARXPS) allows to perform high resolution chemical depth profiling characterization of advanced transistor technology gate stack. By applying the maximum entropy concept to the pARXPS measurements, it is possible to obtain depth profiling information. Although, the capability of this technique has been widely discussed in the past few years, we propose here to validate the pARXPS depth profiling technique using Medium Energy Ion Scattering (MEIS), another high resolution chemical depth profiling characterization technique. Comparison between pARXPS and MEIS measurements allowed us to validate the pARXPS depth profiling technique and to determine with accuracy the composition of HKMG HfON/SiON stack from the 14nm node technology. [Display omitted] •A comparison of the depth profiles obtained by Parallel Angle-Resolved X-ray Photoelectron Spectroscopy (pARXPS) and Medium Energy Ion Scattering (MEIS), two high resolution chemical depth profiling characterization techniques, has been performed on a SiON/Si and a HfON/SiO2/Si thin films stacks.•The different elements distributions in the SiON/Si and HfON/SiO2/Si samples were found to be coherent regarding the two profiling techniques.•This work allowed us validate the pARXPS profile reconstruction obtained on the real 14nm node technology High-k Metal Gate (HKMG) stack in our previous work.