Details

Autor(en) / Beteiligte

• Brouzet, V.
• Salem, B.
• Periwal, P.
• Alcotte, R.
• Chouchane, F.
• Bassani, F.
• Baron, T.
• Ghibaudo, G.

Titel

Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

Ist Teil von

• Solid-state electronics, 2016-04, Vol.118, p.26-29

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •Ω-gate TFETs based on p-Si/i-Si/n+-Si0.7Ge0.3 NWs heterostructure grown by CVD–VLS.•Ge insertion allows improving the electrical performances of TFET.•The Si/SiGe TFET presents a better electrical performance than the Si TFET device.•The B2BT model’s parameters have been extracted for the Si0.7Ge0.3 nanowires. We demonstrate the fabrication and electrical characterization of Ω-gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor–liquid–solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n+Si0.7Ge0.3 heterostructure TFET device are presented and compared to Si and Si0.7Ge0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245nA at VDS=−0.5V and VGS=−3V with a subthreshold swing around 135mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane’s Band-to-Band Tunneling model.