IEEE transactions on magnetics, 2018-04, Vol.54 (4), p.1-4
2018
Details
- Autor(en) / Beteiligte
- Titel
- Ultra-Fast Perpendicular Spin-Orbit Torque MRAM
- Ist Teil von
- IEEE transactions on magnetics, 2018-04, Vol.54 (4), p.1-4
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2018
- Link zum Volltext
- Quelle
- IEEE Explore
- Beschreibungen/Notizen
- We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9464eISSN: 1941-0069DOI: 10.1109/TMAG.2017.2772185Titel-ID: cdi_hal_primary_oai_HAL_hal_01865470v1
- Format
- –
- Schlagworte
- Cache memory, Computer memory, Condensed Matter, Critical current density, Current measurement, Magnetic tunneling, Magnetism, Magnetization, MRAM, Other, Physics, Pulse measurements, Random access memory, spin transfer, spin transfer torque-magnetic random access memory (STT-MRAM), spin-orbit torque, spin-orbit torque-MRAM (SOT-MRAM), spintronics, Switches, Torque, Tunneling magnetoresistance