Details

Autor(en) / Beteiligte

• Betz, A. C
• Wacquez, R
• Vinet, M
• Jehl, X
• Saraiva, A. L
• Sanquer, M
• Ferguson, A. J
• Gonzalez-Zalba, M. F

Titel

Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Ist Teil von

• Nano letters, 2015-07, Vol.15 (7), p.4622-4627

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during inter-dot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A line shape analysis of the dispersive phase shift reveals furthermore an intra-dot valley-orbit splitting Δ vo of 145 μeV. Our results open up the possibility to operate compact complementary metal-oxide semiconductor (CMOS) technology as a singlet–triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics.