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Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures
Ist Teil von
Optics letters, 2017-04, Vol.42 (8), p.1468-1471
Ort / Verlag
United States: Optical Society of America - OSA Publishing
Erscheinungsjahr
2017
Link zum Volltext
Quelle
Optica Publishing Group (OPG)
Beschreibungen/Notizen
The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugation widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, to the best of our knowledge, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, 220 nm thick, Si Bragg filter featuring a corrugation width of 150 nm, a rejection bandwidth of 1.1 nm, and an extinction ratio exceeding 40 dB. This represents a 10-fold width increase, compared to conventional single-periodicity, single-etch counterparts with similar bandwidths.