Details

Autor(en) / Beteiligte

• Djafari Rouhani, M
• Kassem, H
• Dalla Torre, J
• Landa, G
• Rocher, A
• Estève, D

Titel

Role of the substrate imperfections on the island nucleation and defect formation: case of GaSb/GaAs(001)

Ist Teil von

• Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.88 (2), p.181-185

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2002

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have used the kinetic Monte Carlo technique to reproduce some features of 3D growth with experimental reference to the case of GaSb/GaAs(001). We have shown that step edges can act as preferential sites for the nucleation of misfit dislocations. We have observed that their nucleation is anisotropic with respect to [110] and [1−10] orientation of step edges. Finally, introducing second neighbour interactions, we have shown that kinks act as preferential sites for island nucleation.