Details

Autor(en) / Beteiligte

• Diatta, M.
• Bouyssou, E.
• Trémouilles, D.
• Martinez, P.
• Roqueta, F.
• Ory, O.
• Bafleur, M.

Titel

Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)

Ist Teil von

• Microelectronics and reliability, 2009-09, Vol.49 (9), p.1103-1106

Ort / Verlag

Kidlington: Elsevier Ltd

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• High reliability electronic devices need to sustain thousands of electrostatic discharge (ESD) stresses during their lifetime. In this paper, it is demonstrated that repetitive ESD stresses on a protection device such as a bidirectional diode induce progressive defects into the silicon bulk. With “Sirtl etch” failure analysis technique, the defects could be localized quite precisely at the peripheral in/out junctions. The degradation mechanisms during repetitive IEC 61000-4-2 pulses have been investigated on a protection diode with the objective of improving the design for sustaining 1000 pulses at 10 kV level.