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Details

Autor(en) / Beteiligte
Titel
Factors affecting the accuracy of high resolution electron backscatter diffraction when using simulated patterns
Ist Teil von
  • Ultramicroscopy, 2010-11, Vol.110 (12), p.1443-1453
Ort / Verlag
Netherlands: Elsevier B.V
Erscheinungsjahr
2010
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • High resolution EBSD directly compares electron backscattering patterns (EBSPs), generated in a scanning electron microscope, to measure relative strain and rotation to a precision of ∼10 −4 in strain and 10 −4 rad (0.006°) in rotation. However the measurement of absolute strain and rotation requires reference EBSPs of known strain and orientation (or a far field region of known strain). Recent suggestions of using simulated EBSPs with known strain show much promise. However precise measurement of the experimental geometry (pattern centre) is required. Common uncertainties of 0.5% in pattern centre result in uncertainty of ∼10 −3 in strain state. Aberrations in the compact lenses used for EBSP capture can also result in image shifts that correspond to strains/rotations of ±10 −3 between experimental and simulated EBSPs. Simulated EBSPs can be generated using dynamical or kinematic models (or a combination of the two). The choice in simulation model has a significant effect on the measured shifts, particularly at zone axis and high structure factor bands, due to large intensity variations, and for simple kinematic simulations can result in the measurement of rogue shifts and thus erroneous strain measurements. Calibrant samples of known strain provide a method of measuring the experimental geometry but imprecise stage movement combined with the high depth of field in the SEM could also result in uncertainties in strain of ∼10 −3.
Sprache
Englisch
Identifikatoren
ISSN: 0304-3991
eISSN: 1879-2723
DOI: 10.1016/j.ultramic.2010.08.001
Titel-ID: cdi_hal_primary_oai_HAL_hal_00854176v1

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