Details

Autor(en) / Beteiligte

• Planson, D.
• Brosselard, P.
• Grosset, G.
• Tournier, D.
• Dupuy, L.
• Chevalier, Florian

Titel

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Ist Teil von

• Materials science forum, 2013-01, Vol.740-742, p.938-941

Ort / Verlag

Trans Tech Publications Ltd

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This paper presents the methodology for the design of a novel 4H-SiC JFET structure able to sustain 3.3 kV. Comparisons between simulation and characterization res will be made. Taken into account the process limitation, we will also discuss the critical steps and their impact on the electrical characteristics. A design methodology based on Baliga's criterion is proposed to obtain the optimal structure. A 50 nm thick thermal oxide grown above vertical channel and the use of a buried p+ layer as second gate electrode are brand new in front of what is found in literature.