Nano letters, 2007-06, Vol.7 (6), p.1454-1458
2007
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Details
- Autor(en) / Beteiligte
- Titel
- Optical Switching of Porphyrin-Coated Silicon Nanowire Field Effect Transistors
- Ist Teil von
- Nano letters, 2007-06, Vol.7 (6), p.1454-1458
- Ort / Verlag
- Washington, DC: American Chemical Society
- Erscheinungsjahr
- 2007
- Quelle
- MEDLINE
- Beschreibungen/Notizen
- We study porphyrin derivative coated silicon nanowire field effect transistors (SiNW-FETs), which display a large, stable, and reproducible conductance increase upon illumination. The efficiency and the kinetics of the optical switching are studied as a function of gate voltage, illumination wavelength, and temperature. The decay kinetics from the high- to the low-conductance state is governed by charge recombination via tunneling, with a rate depending on the state of the SiNW-FET. The comparison to porphyrin-sensitized carbon nanotube FETs allows the environment- and molecule-dependent photoconversion process to be distinguished from the charge-to-current transducing effect of the semiconducting channel.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1530-6984eISSN: 1530-6992DOI: 10.1021/nl0630485Titel-ID: cdi_hal_primary_oai_HAL_hal_00700064v1
- Format
- –
- Schlagworte
- Applied sciences, Condensed Matter, Cross-disciplinary physics: materials science, rheology, Crystallization - methods, Electrochemistry - instrumentation, Electrochemistry - methods, Electronics, Equipment Design, Equipment Failure Analysis, Exact sciences and technology, Macromolecular Substances - chemistry, Materials science, Materials Testing, Mesoscopic Systems and Quantum Hall Effect, Molecular Conformation, Molecular electronics, nanoelectronics, Nanoscale materials and structures: fabrication and characterization, Nanotechnology - methods, Nanotubes, Nanotubes - chemistry, Nanotubes - ultrastructure, Optics and Photonics - instrumentation, Particle Size, Physics, Porphyrins - chemistry, Quantum wires, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Signal Processing, Computer-Assisted - instrumentation, Silicon - chemistry, Surface Properties, Transistors, Transistors, Electronic