Details

Autor(en) / Beteiligte

• Dupré, C.
• Ernst, T.
• Maffini-Alvaro, V.
• Delaye, V.
• Hartmann, J.-M.
• Borel, S.
• Vizioz, C.
• Faynot, O.
• Ghibaudo, G.
• Deleonibus, S.

Titel

3D nanowire gate-all-around transistors: Specific integration and electrical features

Ist Teil von

• Solid-state electronics, 2008-04, Vol.52 (4), p.519-525

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Three level stacked Si nanowires transistors with HfO 2/TiN/poly-Si gate all around stacks (transistors called hereafter 3NWG) were processed, thanks to a self-aligned process. A current gain of 4.3 for NMOS and 4.7 for PMOS compared to planar SOI was demonstrated for V D = 1.2 V and V G − V T = 0.8 V, thanks to a 3D integration scheme (stacked and aligned nanowires). Those 3NWG devices revealed a current gain of 4.9 for NMOS and 4.2 for PMOS for V D = 50 mV when getting rid of the access resistance impact. Thanks to capacitance measurements, we found an expected inversion charge gain per plan-view surface of 6.4, highlighting the potentiality of the 3NWG device. The split-CV technique was used to extract electron and hole effective mobilities. The transport in 3NWG (on etched surfaces) was compared to the one in planar SOI devices.