Details

Autor(en) / Beteiligte

• Bouschet, M.
• Martinez, E.
• Fabbri, J.M.
• Casiez, L.
• Quintero, A.
• Da Fonseca, J.
• Jany, C.
• Rodriguez, P.
• Chelnokov, A.
• Hartmann, J.M.
• Reboud, V.
• Renault, O.

Titel

Photoelectron spectroscopy study of GeSn epitaxial layers for photonic applications

Ist Teil von

• Microelectronic engineering, 2022-01, Vol.253, p.111663, Article 111663

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2022

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• We have investigated with X-ray Photoelectron Spectroscopy (XPS) the impact of different wet cleanings on the surface of thick GeSn 13% direct band-gap layers grown on germanium strain relaxed buffers. The XPS time-dependent study showed a fast Ge re-oxidation after only a few minutes, while tin was more stable. A dip in (NH4)2S after the 5 min surface treatment with HCl/HF (1% / 10%) slowed germanium re-oxidation. Optimized surface cleanings enabled us to investigate GeSn band structure by momentum-resolved Photo-Emission Electron Microscopy (kPEEM). The obtained band structure images of an ex-situ prepared GeSn 13% surface were discussed. [Display omitted] •Thick GeSn growth on Ge strain relaxed buffers•GeSn surface cleaning and passivation•GeSn band structure investigation by momentum-resolved Photo-Emission Electron Microscopy